Remote impurity scattering in modulation-doped GaAs/AlxGa12xAs heterojunctions
نویسندگان
چکیده
We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa12xAs heterojunction subsequent to the ionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations. @S0163-1829~98!05520-9#
منابع مشابه
Transverse magnetoresistance of GaAs/AlxGa1-xAs heterojunctions in the presence of parallel magnetic fields.
We have calculated the resistivity of a GaAs/AlGaAs heterojunction in the presence of both an in–plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into account fully the distortion of the Fermi contour which is induced by the parallel magnetic field. The scattering of electrons is assumed to be due to remote ionized...
متن کاملElectron mobility in Si delta doped GaAs
We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.
متن کاملLimitation of Electron Mobility in Modulation-Doped In0.53Ga0.47As/InP Quantum Wells at Low Temperatures
The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates ...
متن کاملRole of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas
We re-examine the quantum q and transport t scattering lifetimes due to background impurities in twodimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the nonphysical assumption of an infinitely thick heterostructure and demonstrate that the existing nondivergent multiple scattering theory can lead to unphysical quantum scattering lifetimes...
متن کاملMillimeter and Sub-millimeter wave Response of Two-Dimensional Hot Electrons in double delta doped GaAs Quantum Well
Millimeter and sub-millimeter wave response of two-dimensional hot electrons in double delta doped GaAs quantum well is studied here incorporating deformation potential acoustic, polar optic, ionized background and remote impurity scatterings in the framework of heated drifted Fermi-Dirac distribution function. The inclusion of delta doping is found to enhance the two-dimensional electron densi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1998